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FEATURES 44 V Supply Maximum Ratings V SS to VDD Analog Signal Range Low On Resistance (12 Typ) Low R ON (3 Max) Low RON Match (2.5 Max) Low Power Dissipation Fast Switching Times tON < 175 ns tOFF < 145 ns Low Leakage Currents (5 nA Max) Low Charge Injection (10 pC) Break-Before-Make Switching Action APPLICATIONS Audio and Video Switching Battery Powered Systems Test Equipment Communications Systems
S1A D1 S1B
Dual SPDT Switch ADG436
FUNCTIONAL BLOCK DIAGRAM
S2A D2 S2B
IN1
IN2
ADG436
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG436 is a monolithic CMOS device comprising two independently selectable SPDT switches. It is designed on an LC2MOS process which provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is very flat over the full analog input range ensuring good linearity and low distortion when switching audio signals. High switching speed also makes the part suitable for video signal switching. CMOS construction ensures ultralow power dissipation making the part ideally suited for portable and battery powered instruments. Each switch conducts equally well in both directions when ON and has an input signal range which extends to the power supplies. In the OFF condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching action for use in multiplexer applications. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.
1. Extended Signal Range The ADG436 is fabricated on an enhanced LC2MOS process, giving an increased signal range which extends to the supply rails. 2. Low Power Dissipation 3. Low RON 4. Single Supply Operation For applications where the analog signal is unipolar, the ADG436 can be operated from a single rail power supply.
REV. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 1998
ADG436-SPECIFICATIONS1
Dual Supply
Parameter ANALOG SWITCH Analog Signal Range RON RON RON Match LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Delay, tOPEN Charge Injection OFF Isolation Channel-to-Channel Crosstalk CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD ISS VDD/VSS
NOTES 1 Temperature range is as follows: B Version, -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
(VDD = +15 V, VSS = -15 V, GND = 0 V, unless otherwise noted)
+25 C -40 C to +85 C VSS to VDD 12 25 1 3 1 2.5 0.005 0.25 0.05 0.4 Units V typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max ns min pC typ dB typ dB typ pF typ pF typ mA typ mA max A typ A max V min/V max Digital Inputs = 0 V or 5 V VIN = 0 V or VDD Test Conditions/ Comments
VD = 10 V, IS = -1 mA VD = -5 V, 5 V, IS = -10 mA VD = 10 V, IS = -10 mA VDD = +16.5 V, VSS = -16.5 V VD = 15.5 V, VS = 15.5 V Test Circuit 2 VS = VD = 15.5 V Test Circuit 3
5 5 2.4 0.8 0.005 0.5
70 125 60 120 10 10 72 90 10 30 0.05 0.35 0.01 1 5 3/ 20
RL = 300 , C L = 35 pF; VS = 10 V; Test Circuit 4 RL = 300 , C L = 35 pF; VS = 10 V; Test Circuit 4 RL = 300 , C L = 35 pF; VS = +5 V; Test Circuit 5 VD = 0 V, RD = 0 , CL = 10 nF; Test Circuit 6 RL = 75 , CL = 5 pF, f = 1 MHz; VS = 2.3 V rms, Test Circuit 7 RL = 75 , CL = 5 pF, f = 1 MHz; VS = 2.3 V rms, Test Circuit 8
|VDD| = |VSS|
-2-
REV. A
ADG436 Single Supply (V
Parameter ANALOG SWITCH Analog Signal Range RON RON Match LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Delay, tOPEN Charge Injection OFF Isolation Channel-to-Channel Crosstalk CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD VDD
NOTES 1 Temperature range is as follows: B Version, - 40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
DD
= +12 V, VSS = 0 V, GND = 0 V, unless otherwise noted)
+25 C -40 C to +85 C 0 to VDD 20 40 2.5 0.005 0.25 0.05 4 Units V typ max max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max ns typ pC typ dB typ dB typ pF typ pF typ mA typ mA max V min/V max VDD = +13.5 V Digital Inputs = 0 V or 5 V VIN = 0 V or VDD Test Conditions/ Comments
VD = +1 V, +10 V, IS = -1 mA
5 5 2.4 0.8 0.005 0.5
VDD = +13.2 V VD = 12.2 V/1 V, VS = 1 V/12.2 V Test Circuit 2 VS = VD = 12.2 V/1 V Test Circuit 3
100 200 90 180 10 10 72 90 10 30 0.05 0.35 +3/+30
RL = 300 , C L = 35 pF; VS = +8 V; Test Circuit 4 RL = 300 , C L = 35 pF; VS = +8 V; Test Circuit 4 RL = 300 , C L = 35 pF; VS = +5 V; Test Circuit 5 VD = 6 V, RD = 0 , CL = 10 nF; Test Circuit 6 RL = 75 , CL = 5 pF, f = 1 MHz; VS = 1.15 V rms; Test Circuit 7 RL = 75 , CL = 5 pF, f = 1 MHz; VS = 1.15 V rms, Test Circuit 8
REV. A
-3-
ADG436
ABSOLUTE MAXIMUM RATINGS 1
(TA = +25C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +30 V VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to -30 V Analog, Digital Inputs2 . . . . . . . . . . . VSS - 2 V to VDD + 2 V or 20 mA, whichever occurs first Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 20 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA (Pulsed at 1 ms, 10% Duty Cycle max) Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . -65C to +125C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . +150C Plastic DIP Package JA, Thermal Impedance . . . . . . . . . . . . . . . . . . . 117C/W Lead Temperature, Soldering (10 sec) . . . . . . . . . . +260C
SOIC Package JA, Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 77C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . +215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG436 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
Table I. Truth Table
Logic 0 1
Switch A OFF ON
Switch B ON OFF
ORDERING GUIDE
Model ADG436BN ADG436BR
Temperature Range - 40C to +85C - 40C to +85C
Package Descriptions Plastic DIP 0.15" SOIC
Package Options N-16 R-16A
-4-
REV. A
ADG436
TERMINOLOGY
VDD VSS
GND S D IN RON RON RON Match IS (OFF) ID, IS (ON) VD (VS ) CS (OFF) CD, CS (ON) tON
Most positive power supply potential. Most negative power supply potential in dual supplies. In single supply applications, it may be connected to ground. Ground (0 V) reference. Source terminal. May be an input or output. Drain terminal. May be an input or output. Logic control input. Ohmic resistance between D and S. RON variation due to a change in the analog input voltage with a constant load current. Difference between the RON of any two channels. Source leakage current with the switch "OFF." Channel leakage current with the switch "ON." Analog voltage on terminals D, S. "OFF" switch source capacitance. "ON" switch capacitance. Delay between applying the digital control input and the output switching on.
Delay between applying the digital control input and the output switching off. tOPEN Break-before-make delay when switches are configured as a multiplexer. VINL Maximum input voltage for Logic "0." VINH Minimum input voltage for Logic "1." IINL (IINH) Input current of the digital input. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an "OFF" switch. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during switching. IDD Positive supply current. ISS Negative supply current.
tOFF
PIN CONFIGURATION (DIP/SOIC)
IN1 1 S1A 2 D1 3 S1B 4 16 NC 15 NC 14 NC
13 VDD TOP VIEW VSS 5 (Not to Scale) 12 S2B 11 D2 10 S2A 9 IN2
ADG436
GND 6 NC 7 NC 8
NC = NO CONNECT
REV. A
-5-
ADG436-Typical Performance Characteristics
26 50 TA = +25 C 45 22 VDD = +5V VSS = -5V 40 35 RON - 30 25 20 10 VDD = +15V VSS = -15V 6 -15 -10 -5 0 5 VD, VS - Volts 10 15 15 10 0 3 6 9 VD, VS - Volts 12 15 VDD = +10V VSS = 0V VDD = +15V VSS = 0V RON - VDD = +5V VSS = 0V 14 16 VDD = +16.5V VSS = -16.5V
18 RON -
12 +85 C 10 +25 C -40 C
14
VDD = +10V VSS = -10V
8
6 -15
-10
-5 0 5 VD, VS - Volts
10
15
Figure 1. RON as a Function of VD (VS): Dual Supply
Figure 2. RON as a Function of VD (V S): Single Power Supply
Figure 3. RON as a Function of VD (VS) for Different Temperatures: Dual Supply
20 VDD = +16.5V VSS = 0V 18
0.01 VDD = +16.5V VSS = -16.5V TA = +25 C 0
0.01 VDD = +16.5V VSS = -16.5V TA = +25 C 0 IS(OFF) - nA -5 0 5 VD, VS - Volts 10
16 RON - +85 C 14 +25 C
ID(ON) - nA
-0.01
-0.01
-0.02
-0.02
12
-40 C 10 0 3 6 9 VD, VS - Volts 12 15 -0.03 -15 -10 15 -0.03 -15 -10 -5 0 5 VD, VS - Volts 10 15
Figure 4. RON as a Function of VD (VS) for Different Temperatures: Single Supply
Figure 5. ID (ON) Leakage Current as a Function of VD (VS): Dual Supply
Figure 6. IS (OFF) Leakage Current as a Function of VD (VS): Dual Supply
0.01 VDD = +16.5V VSS = -16.5V TA = +25 C SWITCHING TIME - ns 0 IS(ON) - nA
160 VD = 2V VS = -2V 140
1 VDD = +16.5V VSS = -16.5V TA = +25 C
0.8
-0.01
100
IDD - mA 0 5 10 VD, VS - Volts 15 20
120
0.6
0.4
-0.02
80
0.2
-0.03 -15
-10
-5 0 5 VD, VS - Volts
10
15
60
0
0
200 400 600 800 1000 SWITCHING FREQUENCY - kHz
Figure 7. IS (ON) Leakage Current as a Function of VD (VS): Dual Supply
Figure 8. Switching Time as a Function of VD (V S): Dual Supply
Figure 9. I DD as a Function of Switching Frequency: Dual Supply
-6-
REV. A
Test Circuits- ADG436
IDS V1 IS(OFF) A S D VD VS S D VD S D ID(ON) A VD
NC
RON = V1/IDS
NC = NO CONNECT
Test Circuit 1. On Resistance
0.1 F VDD
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
VDD -10V VS +10V IN VSS SB D SA RL 300 GND CL 35pF VOUT
3V 0V +10V
VIN
50%
50%
tOFF tON
50%
0V VS -10V
0.1 F VSS 0.1 F VDD
Test Circuit 4. Switching Times
VDD SB VS SA RL 300 GND VSS CL 35pF D VOUT
3V VIN 0V VS VOUT 50% 50%
IN
tOPEN
0.1 F
VSS
Test Circuit 5. Break-Before-Make Delay, tOPEN
VDD
VDD RD VD IN GND VSS D SA CL 10nF VOUT
3V VIN 0V VOUT QINJ = CL VOUT VOUT
0V
VSS
Test Circuit 6. Charge Injection
0.1 F VDD
0.1 F
VDD
VDD 75
VDD VOUT VS S VS VIN GND VSS CHANNEL-TO-CHANNEL CROSSTALK 20 Log |VS/VOUT| D RL 75 VIN1
S
D
VIN2 VOUT
S NC GND
D VSS
RL 75
0.1 F
VSS
0.1 F
VSS
Test Circuit 7. Off Isolation
Test Circuit 8. Channel-to-Channel Crosstalk
REV. A
-7-
ADG436
APPLICATIONS INFORMATION
ADG436 Supply Voltages Power-Supply Sequencing
The ADG436 can operate from a dual or single supply. VSS should be connected to GND when operating with a single supply. When using a dual supply, the ADG436 can also operate with unbalanced supplies, for example VDD = 20 V and VSS = -5 V. The only restrictions are that VDD to GND must not exceed 30 V, VSS to GND must not drop below -30 V and VDD to VSS must not exceed +44 V. It is important to remember that the ADG436 supply voltage directly affects the input signal range, the switch ON resistance and the switching times of the part. The effects of the power supplies on these characteristics can be clearly seen from the characteristic curves in this data sheet.
OUTLINE DIMENSIONS
Dimensions are shown in inches and (mm).
16-Lead Plastic DIP (N-16)
0.840 (21.33) 0.745 (18.93)
16 1 9 8
16-Lead Narrow Body SOIC (R-16A)
0.3937 (10.00) 0.3859 (9.80)
0.280 (7.11) 0.240 (6.10) 0.325 (8.25) 0.300 (7.62) 0.195 (4.95) 0.115 (2.93)
0.1574 (4.00) 0.1497 (5.80)
16 1
9 8
0.2550 (6.20) 0.2284 (5.80)
PIN 1 0.210 (5.33) MAX 0.160 (4.06) 0.115 (2.93) 0.022 (0.558) 0.014 (0.356) 0.100 (2.54) BSC
0.060 (1.52) 0.015 (0.38) 0.130 (3.30) MIN 0.070 (1.77) SEATING 0.045 (1.15) PLANE
PIN 1 0.0098 (0.25) 0.0040 (0.10)
0.0688 (1.75) 0.0532 (1.35)
0.0196 (0.50) x 45 0.0099 (0.25)
0.015 (0.381) 0.008 (0.204)
SEATING PLANE
0.0500 (1.27) BSC
0.0192 (0.49) 0.0138 (0.35)
0.0099 (0.25) 0.0075 (0.19)
8 0
0.0500 (1.27) 0.0160 (0.41)
-8-
REV. A
PRINTED IN U.S.A.
C2108a-0-11/98
When using CMOS devices, care must be taken to ensure correct power-supply sequencing. Incorrect power-supply sequencing can result in the device being subjected to stresses beyond those maximum ratings listed in the data sheet. Always sequence VDD on first followed by VSS and the logic signals. An external signal can then be safely presented to the source or drain of the switch.

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